RD3P050SNTL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 100V 5A TO252
$0.94
Available to order
Reference Price (USD)
2,500+
$0.33770
5,000+
$0.32606
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with RD3P050SNTL1 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RD3P050SNTL1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microchip Technology
APT1201R5BVFRG
Diodes Incorporated
DMTH4005SCT
Diodes Incorporated
DMN2013UFDE-7
Vishay Siliconix
SI4456DY-T1-E3
Rohm Semiconductor
RUR020N02TL
EPC
EPC2204
Nexperia USA Inc.
2N7002BK,215
IXYS
IXTU01N100
IXYS
IXFX32N80Q3
Diodes Incorporated