SI4456DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 33A 8SO
$2.92
Available to order
Reference Price (USD)
2,500+
$1.26451
5,000+
$1.22063
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI4456DY-T1-E3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI4456DY-T1-E3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Rohm Semiconductor
RUR020N02TL
EPC
EPC2204
Nexperia USA Inc.
2N7002BK,215
IXYS
IXTU01N100
IXYS
IXFX32N80Q3
Diodes Incorporated
DMP6180SK3Q-13
onsemi
FDA16N50-F109
onsemi
NTBGS6D5N15MC
Alpha & Omega Semiconductor Inc.
AOWF11S60
Diodes Incorporated