RD3L140SPTL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 60V 14A TO252
$1.80
Available to order
Reference Price (USD)
2,500+
$0.60158
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance RD3L140SPTL1 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RD3L140SPTL1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Toshiba Semiconductor and Storage
SSM6J511NU,LF
Rohm Semiconductor
R8003KNXC7G
Infineon Technologies
IPD031N03LGATMA1
Vishay Siliconix
IRF740STRRPBF
Microchip Technology
TN2106K1-G
Vishay Siliconix
IRFBG30PBF-BE3
Diodes Incorporated
BS170FTA
Panjit International Inc.
PJMD390N65EC_L2_00001
Infineon Technologies
BSC079N03SG
Rectron USA