R6576ENZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 76A TO-247, LOW-NOISE POWER
$20.39
Available to order
Reference Price (USD)
1+
$20.39000
500+
$20.1861
1000+
$19.9822
1500+
$19.7783
2000+
$19.5744
2500+
$19.3705
Exquisite packaging
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Boost your electronic applications with R6576ENZ4C13, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, R6576ENZ4C13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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