GP2T080A120H
SemiQ
SemiQ
SIC MOSFET 1200V 80M TO-247-4L
$11.62
Available to order
Reference Price (USD)
1+
$11.62000
500+
$11.5038
1000+
$11.3876
1500+
$11.2714
2000+
$11.1552
2500+
$11.039
Exquisite packaging
Discount
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Discover high-performance GP2T080A120H from SemiQ, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, GP2T080A120H delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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