R6530KNZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 30A TO-247, HIGH-SPEED SWIT
$7.18
Available to order
Reference Price (USD)
1+
$7.18000
500+
$7.1082
1000+
$7.0364
1500+
$6.9646
2000+
$6.8928
2500+
$6.821
Exquisite packaging
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Discover R6530KNZ4C13, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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