RM2301
Rectron USA
Rectron USA
MOSFET P-CHANNEL 20V 3A SOT23
$0.04
Available to order
Reference Price (USD)
1+
$0.04200
500+
$0.04158
1000+
$0.04116
1500+
$0.04074
2000+
$0.04032
2500+
$0.0399
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with RM2301 by Rectron USA, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RM2301 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Panjit International Inc.
PJL9434A_R2_00001
Vishay Siliconix
SIR410DP-T1-GE3
Infineon Technologies
IPA80R310CEXKSA2
Infineon Technologies
IPB038N12N3GATMA1
Fairchild Semiconductor
FDMS2504SDC
STMicroelectronics
STP410N4F7AG
Vishay Siliconix
IRF9Z34SPBF
Nexperia USA Inc.
BUK7E5R2-100E,127
Rectron USA
RMD1N25ES9
Rohm Semiconductor