R6507KNXC7G
Rohm Semiconductor
Rohm Semiconductor
650V 7A TO-220FM, HIGH-SPEED SWI
$2.46
Available to order
Reference Price (USD)
1+
$2.46000
500+
$2.4354
1000+
$2.4108
1500+
$2.3862
2000+
$2.3616
2500+
$2.337
Exquisite packaging
Discount
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Rohm Semiconductor presents R6507KNXC7G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, R6507KNXC7G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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