SPP08N80C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 8A TO220-3
$3.27
Available to order
Reference Price (USD)
1+
$2.61000
10+
$2.36800
100+
$1.92950
500+
$1.53126
1,000+
$1.29234
Exquisite packaging
Discount
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Optimize your electronic systems with SPP08N80C3XKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SPP08N80C3XKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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