Shopping cart

Subtotal: $0.00

R6077VNZ4C13

Rohm Semiconductor
R6077VNZ4C13 Preview
Rohm Semiconductor
600V 77A TO-247, PRESTOMOS WITH
$14.74
Available to order
Reference Price (USD)
1+
$14.74000
500+
$14.5926
1000+
$14.4452
1500+
$14.2978
2000+
$14.1504
2500+
$14.003
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
  • Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 781W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3

Related Products

Rohm Semiconductor

RS1G260MNTB

Infineon Technologies

IPP114N03LG

Vishay Siliconix

SUD25N15-52-E3

Toshiba Semiconductor and Storage

SSM6J503NU,LF

Vishay Siliconix

SUP85N15-21-E3

Infineon Technologies

IPB80N06S209ATMA1

Renesas Electronics America Inc

2SK3378ENTL-E

Panjit International Inc.

PJE138K_R1_00001

Infineon Technologies

BSC200P03LSG

Top