R6014YNXC7G
Rohm Semiconductor
Rohm Semiconductor
600V 9A TO-220FM, FAST SWITCHING
$3.59
Available to order
Reference Price (USD)
1+
$3.59000
500+
$3.5541
1000+
$3.5182
1500+
$3.4823
2000+
$3.4464
2500+
$3.4105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance R6014YNXC7G from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, R6014YNXC7G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
- Vgs(th) (Max) @ Id: 6V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXFN70N100X
onsemi
FQU11P06TU
Infineon Technologies
BSZ050N03LSGATMA1
Vishay Siliconix
SQM60N20-35_GE3
Nexperia USA Inc.
BUK9Y19-100E,115
Vishay Siliconix
SIHH068N60E-T1-GE3
Infineon Technologies
BSC090N03MSGXT
STMicroelectronics
STFW2N105K5
onsemi
NTMFS4120NT1G
Infineon Technologies