BUK9Y19-100E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 56A LFPAK56
$1.43
Available to order
Reference Price (USD)
1,500+
$0.49533
3,000+
$0.46231
7,500+
$0.43919
10,500+
$0.42268
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BUK9Y19-100E,115 by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BUK9Y19-100E,115 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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