R6011ENXC7G
Rohm Semiconductor
Rohm Semiconductor
600V 11A TO-220FM, LOW-NOISE POW
$3.43
Available to order
Reference Price (USD)
1+
$3.43000
500+
$3.3957
1000+
$3.3614
1500+
$3.3271
2000+
$3.2928
2500+
$3.2585
Exquisite packaging
Discount
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Upgrade your electronic designs with R6011ENXC7G by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, R6011ENXC7G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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