G3035
Goford Semiconductor
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
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Boost your electronic applications with G3035, a reliable Transistors - FETs, MOSFETs - Single by Goford Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, G3035 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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