R6008ANX
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 8A TO-220FM
$3.11
Available to order
Reference Price (USD)
1+
$2.83000
10+
$2.53900
100+
$2.04050
500+
$1.67650
1,000+
$1.38910
2,500+
$1.34120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with R6008ANX by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, R6008ANX ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
IRFZ14PBF
IXYS
IXFJ20N85X
Nexperia USA Inc.
PHK13N03LT,518
Nexperia USA Inc.
PSMN045-80YS,115
Fairchild Semiconductor
SFI9Z24TU
onsemi
FDS6690A
Rectron USA
RM50N200T2
Infineon Technologies
IPL60R085P7AUMA1
Wolfspeed, Inc.
C3M0032120K
IXYS