PTFA260851F V1 R250
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 85W H-31248-2
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Unlock next-gen RF performance with PTFA260851F V1 R250 from Infineon Technologies. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.68GHz
- Gain: 14dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 85W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-31248-2
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Infineon Technologies