MRFG35010ANT1
NXP USA Inc.
NXP USA Inc.
FET RF 15V 3.55GHZ PLD-1.5
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The MRFG35010ANT1 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 10dB
- Voltage - Test: 12 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 130 mA
- Power - Output: 9W
- Voltage - Rated: 15 V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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