PTFA192001E1V4R250XTMA1
Infineon Technologies
Infineon Technologies
IC RF POWER TRANSISTOR
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Unlock next-gen RF performance with PTFA192001E1V4R250XTMA1 from Infineon Technologies. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 15.9dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-33288-2
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