MRF8S23120HR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.3GHZ NI-780
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For mission-critical RF amplification, choose NXP USA Inc.'s MRF8S23120HR3 MOSFETs. Combining silicon carbide (SiC) robustness with precision matching networks, they outperform in avionics and marine navigation systems. Extended lifecycle ratings reduce total cost of ownership. Your perfect component awaits click inquire to connect with our technical specialists!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.3GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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