PTFA092211ELV4R250XTMA1
Infineon Technologies
Infineon Technologies
FET RF LDMOS 220W H33288-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with Infineon Technologies's PTFA092211ELV4R250XTMA1 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 940MHz
- Gain: 18dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.75 A
- Power - Output: 220W
- Voltage - Rated: 65 V
- Package / Case: H-33288-2
- Supplier Device Package: H-33288-2
Related Products
onsemi
2N5485_D27Z
Ampleon USA Inc.
BLF8G24LS-200P,112
STMicroelectronics
SD2932B
NXP USA Inc.
MMRF1008HSR5
NXP USA Inc.
BLF6G24-180PN,112
NXP USA Inc.
MRF8P29300HSR6
NXP USA Inc.
BF1211R,215
NXP USA Inc.
MRF6S21050LR3
NXP USA Inc.
BF1204,135
Infineon Technologies