BLF6G24-180PN,112
NXP USA Inc.
NXP USA Inc.
TRANSISTOR PWR LDMOS SOT539A
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with BLF6G24-180PN,112 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2GHz ~ 2.2GHz
- Gain: 17.5dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 50W
- Voltage - Rated: -
- Package / Case: SOT539A
- Supplier Device Package: SOT539A
Related Products
NXP USA Inc.
MRF8P29300HSR6
NXP USA Inc.
BF1211R,215
NXP USA Inc.
MRF6S21050LR3
NXP USA Inc.
BF1204,135
Infineon Technologies
PTFA092201F V1
NXP USA Inc.
ON5520,215
Infineon Technologies
PTFA211801F V4 R250
STMicroelectronics
PD57006S-E
Ampleon USA Inc.
BLF640U
STMicroelectronics