PTFA092201FV4XWSA1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 220W H-37260-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with PTFA092201FV4XWSA1 from Infineon Technologies. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.85 A
- Power - Output: 220W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37260-2
Related Products
STMicroelectronics
PD85035-E
Infineon Technologies
BF2030-E6327
NXP USA Inc.
AFT23S160W02SR3
NXP USA Inc.
MRF6S19200HR3
Ampleon USA Inc.
BLS8G2731L-400PU
Ampleon USA Inc.
BLF368,112
Infineon Technologies
PTFA181001FV4R250FTMA1
STMicroelectronics
PD57018S
MACOM Technology Solutions
XF1001-SC-0G00
NXP USA Inc.