MRF6S19200HR3
NXP USA Inc.
NXP USA Inc.
FET RF 66V 1.99GHZ NI780
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance MRF6S19200HR3 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 17.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 56W
- Voltage - Rated: 66 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
Related Products
Ampleon USA Inc.
BLS8G2731L-400PU
Ampleon USA Inc.
BLF368,112
Infineon Technologies
PTFA181001FV4R250FTMA1
STMicroelectronics
PD57018S
MACOM Technology Solutions
XF1001-SC-0G00
NXP USA Inc.
MRF8P26080HR3
NXP USA Inc.
AFT09H310-03SR6
NXP USA Inc.
MMRF2004NBR1
Ampleon USA Inc.
BLC9G27LS-150AVY
Broadcom Limited