PSMN0R7-25YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
$3.11
Available to order
Reference Price (USD)
1,500+
$0.97933
3,000+
$0.91179
7,500+
$0.87802
10,500+
$0.85960
Exquisite packaging
Discount
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Discover high-performance PSMN0R7-25YLDX from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, PSMN0R7-25YLDX delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.72mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56; Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
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