RM130N200HD
Rectron USA
Rectron USA
MOSFET N-CH 200V 132A TO263-2
$3.84
Available to order
Reference Price (USD)
1+
$3.84000
500+
$3.8016
1000+
$3.7632
1500+
$3.7248
2000+
$3.6864
2500+
$3.648
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RM130N200HD by Rectron USA. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RM130N200HD inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 429W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPC100N04S51R7ATMA1
Taiwan Semiconductor Corporation
TSM025NB04LCR RLG
Vishay Siliconix
SIS110DN-T1-GE3
Sanyo
NTMFS4926NET1G
Vishay Siliconix
SIHG28N65EF-GE3
onsemi
SCH1301-TL-E
Infineon Technologies
IRFS52N15DTRRP
Infineon Technologies
IPD50R800CEAUMA1
STMicroelectronics
STP20NM60
Vishay Siliconix