PMZ600UNEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
$0.05
Available to order
Reference Price (USD)
1+
$0.04769
500+
$0.0472131
1000+
$0.0467362
1500+
$0.0462593
2000+
$0.0457824
2500+
$0.0453055
Exquisite packaging
Discount
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Optimize your electronic systems with PMZ600UNEZ, a high-quality Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PMZ600UNEZ provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
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