PMXB350UPEZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PMXB350UPE - 20 V, P-CH
$0.06
Available to order
Reference Price (USD)
5,000+
$0.10325
10,000+
$0.09521
25,000+
$0.08985
50,000+
$0.08182
125,000+
$0.08036
Exquisite packaging
Discount
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Discover PMXB350UPEZ, a versatile Transistors - FETs, MOSFETs - Single solution from NXP Semiconductors, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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