IPD80R3K3P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 1.9A TO252-3
$0.52
Available to order
Reference Price (USD)
2,500+
$0.36360
5,000+
$0.34120
12,500+
$0.32999
25,000+
$0.32388
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPD80R3K3P7ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPD80R3K3P7ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STP6N90K5
Infineon Technologies
IPC70N04S5L4R2ATMA1
Texas Instruments
TPIC5223LD
Micro Commercial Co
SIL08N03-TP
onsemi
NTLJS3D0N02P8ZTAG
Microchip Technology
DN3535N8-G
Fairchild Semiconductor
FDB6030L
Infineon Technologies
BSZ040N06LS5ATMA1
onsemi
FDC638P
Infineon Technologies