IPW65R190CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 14A TO247-3
$5.36
Available to order
Reference Price (USD)
1+
$5.36000
500+
$5.3064
1000+
$5.2528
1500+
$5.1992
2000+
$5.1456
2500+
$5.092
Exquisite packaging
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Boost your electronic applications with IPW65R190CFD7AXKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPW65R190CFD7AXKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 77W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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