PMPB24EPX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 6.4A DFN2020MD-6
$0.16
Available to order
Reference Price (USD)
1+
$0.16208
500+
$0.1604592
1000+
$0.1588384
1500+
$0.1572176
2000+
$0.1555968
2500+
$0.153976
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PMPB24EPX by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PMPB24EPX ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
BSC022N04LSATMA1
Fairchild Semiconductor
FDFMA2P853T
Sanyo
NIF9N05CLT3G-SY
Transphorm
TP65H300G4LSG
onsemi
NTMFS5C612NLT3G
Infineon Technologies
BSS308PEH6327XTSA1
Toshiba Semiconductor and Storage
SSM3J378R,LXHF
Infineon Technologies
IPA65R190C6XKSA1
Diodes Incorporated
DMTH8001STLWQ-13
Nexperia USA Inc.