TP65H300G4LSG
Transphorm
Transphorm
GANFET N-CH 650V 6.5A 3PQFN
$4.02
Available to order
Reference Price (USD)
1+
$4.02000
500+
$3.9798
1000+
$3.9396
1500+
$3.8994
2000+
$3.8592
2500+
$3.819
Exquisite packaging
Discount
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Experience the power of TP65H300G4LSG, a premium Transistors - FETs, MOSFETs - Single from Transphorm. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TP65H300G4LSG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 21W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
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