PMH550UNEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 770MA DFN0606-3
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
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Boost your electronic applications with PMH550UNEH, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMH550UNEH meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V
- Vgs(th) (Max) @ Id: 0.95V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN0606-3
- Package / Case: 3-XFDFN
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