PJQ4444P_R2_00001
Panjit International Inc.
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with PJQ4444P_R2_00001, a high-quality Transistors - FETs, MOSFETs - Single from Panjit International Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PJQ4444P_R2_00001 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
SIRA20DP-T1-RE3
STMicroelectronics
STB55NF06T4
Diodes Incorporated
DMP3020LSS-13
Goford Semiconductor
G06N10
Motorola
IRF840
Vishay Siliconix
SI7143DP-T1-GE3
IXYS
IXFT18N100Q3
Microchip Technology
APT39F60J
Fairchild Semiconductor
FQPF5N80
onsemi