SIRA20DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 81.7A/100A PPAK
$1.65
Available to order
Reference Price (USD)
3,000+
$0.74620
6,000+
$0.71117
15,000+
$0.68614
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIRA20DP-T1-RE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIRA20DP-T1-RE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
STMicroelectronics
STB55NF06T4
Diodes Incorporated
DMP3020LSS-13
Goford Semiconductor
G06N10
Motorola
IRF840
Vishay Siliconix
SI7143DP-T1-GE3
IXYS
IXFT18N100Q3
Microchip Technology
APT39F60J
Fairchild Semiconductor
FQPF5N80
onsemi
NVMFS5C426NWFAFT3G
onsemi