NTMTS1D6N10MCTXG
onsemi
onsemi
SINGLE N-CHANNEL POWER MOSFET 10
$11.07
Available to order
Reference Price (USD)
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$11.07000
500+
$10.9593
1000+
$10.8486
1500+
$10.7379
2000+
$10.6272
2500+
$10.5165
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMTS1D6N10MCTXG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMTS1D6N10MCTXG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 291W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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