PJA3419_R1_00001
Panjit International Inc.
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Panjit International Inc. presents PJA3419_R1_00001, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PJA3419_R1_00001 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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