SQJ418EP-T2_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 48A PPAK SO-8
$0.51
Available to order
Reference Price (USD)
1+
$0.51183
500+
$0.5067117
1000+
$0.5015934
1500+
$0.4964751
2000+
$0.4913568
2500+
$0.4862385
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SQJ418EP-T2_GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SQJ418EP-T2_GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IRFR220NTRLPBF
Infineon Technologies
IRF520NSTRLPBF
NXP USA Inc.
PMV40UN,215
Vishay Siliconix
IRF9540SPBF
Fairchild Semiconductor
HUFA75842S3S
Vishay Siliconix
SQM50N04-4M1_GE3
onsemi
FDD6N50FTM
IXYS
IXTA70N075T2-TRL
Rectron USA
RM90N40DF
Rohm Semiconductor