PDTA123EE,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 150MW SC75
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
Discount
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Optimize your circuits with the PDTA123EE,115 from NXP USA Inc., a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. NXP USA Inc. provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
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