DDTA114ECAQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT23 T&R 3K
$0.04
Available to order
Reference Price (USD)
1+
$0.04169
500+
$0.0412731
1000+
$0.0408562
1500+
$0.0404393
2000+
$0.0400224
2500+
$0.0396055
Exquisite packaging
Discount
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The DDTA114ECAQ-7-F by Diodes Incorporated is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Diodes Incorporated stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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