PBRN113EK,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 250MW SMT3
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Boost your electronic projects with the PBRN113EK,115 from NXP USA Inc., a key player in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer superior performance with features like high switching speed, low power loss, and reliable operation. Ideal for automotive electronics, industrial automation, and consumer gadgets. NXP USA Inc. ensures top-quality components for your needs. Contact us for more information or to request samples!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
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