FJN3307RTA
onsemi
onsemi
TRANS PREBIAS NPN 300MW TO92-3
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Enhance your electronic designs with the FJN3307RTA by onsemi, a standout in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are engineered for superior performance and longevity. Notable features include low noise, high frequency response, and excellent thermal characteristics. Suitable for audio amplifiers, LED drivers, and motor control circuits. onsemi is committed to delivering high-quality components. Request a quote or additional information today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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