NXH010P120MNF1PTG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$145.82
Available to order
Reference Price (USD)
1+
$145.82000
500+
$144.3618
1000+
$142.9036
1500+
$141.4454
2000+
$139.9872
2500+
$138.529
Exquisite packaging
Discount
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The NXH010P120MNF1PTG from onsemi is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, NXH010P120MNF1PTG offers the reliability you need. Contact us now to discuss how we can support your project requirements with onsemi s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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