DMN15M5UCA6-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X4-DSN2117-
$0.32
Available to order
Reference Price (USD)
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$0.31996
500+
$0.3167604
1000+
$0.3135608
1500+
$0.3103612
2000+
$0.3071616
2500+
$0.303962
Exquisite packaging
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Optimize your electronic circuits with Diodes Incorporated s DMN15M5UCA6-7, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMN15M5UCA6-7 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 840µA
- Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA, WLCSP
- Supplier Device Package: X4-DSN2117-6
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