NX7002AK,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
$0.22
Available to order
Reference Price (USD)
3,000+
$0.02581
6,000+
$0.02328
15,000+
$0.02024
30,000+
$0.01822
75,000+
$0.01619
150,000+
$0.01346
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NX7002AK,215 by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NX7002AK,215 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rohm Semiconductor
SCT4036KRC15
Infineon Technologies
IPD70R950CEAUMA1
NXP Semiconductors
PSMN035-150P,127
onsemi
NIF9N05CLT3G
Nexperia USA Inc.
PSMNR90-40YLHX
Vishay Siliconix
SIHB12N65E-GE3
STMicroelectronics
STD11N65M5
Vishay Siliconix
SIR106DP-T1-RE3
Vishay Siliconix
SQM120N04-1M9_GE3
Vishay Siliconix