NVTYS9D6P04M8LTWG
onsemi
onsemi
MV8 40V LL SINGLE PCH L
$0.67
Available to order
Reference Price (USD)
1+
$0.67267
500+
$0.6659433
1000+
$0.6592166
1500+
$0.6524899
2000+
$0.6457632
2500+
$0.6390365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents NVTYS9D6P04M8LTWG, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NVTYS9D6P04M8LTWG delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3V @ 580µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
Related Products
IXYS
IXTT96N20P-TRL
Sanyo
SFT1305-TL-E
onsemi
NVMFS014P04M8LT1G
onsemi
NVMFWS014P04M8LT1G
onsemi
FDC013P20L
Panjit International Inc.
PJP5NA80_T0_00001
Renesas Electronics America Inc
2SK2869-91L
Micro Commercial Co
MCACD40N03-TP
Renesas
UPA1911ATE(0)-T1-A
Renesas Electronics America Inc