NVTYS010N06CLTWG
onsemi
onsemi
T6 60V N-CH LL IN LFPAK33
$0.84
Available to order
Reference Price (USD)
1+
$0.83605
500+
$0.8276895
1000+
$0.819329
1500+
$0.8109685
2000+
$0.802608
2500+
$0.7942475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NVTYS010N06CLTWG from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NVTYS010N06CLTWG delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
Related Products
Rohm Semiconductor
R6020ENX
Diodes Incorporated
ZVP2106ASTZ
onsemi
2SK2161
Vishay Siliconix
SI4840BDY-T1-E3
Diodes Incorporated
ZVP2120GTA
Vishay Siliconix
SIHB30N60AEL-GE3
Harris Corporation
BUZ76A
STMicroelectronics
STI6N62K3
Rohm Semiconductor
RV3C002UNT2CL
Vishay Siliconix