NVMFWS2D3P04M8LT1G
onsemi
onsemi
MV8 P INITIAL PROGRAM
$1.84
Available to order
Reference Price (USD)
1+
$1.83891
500+
$1.8205209
1000+
$1.8021318
1500+
$1.7837427
2000+
$1.7653536
2500+
$1.7469645
Exquisite packaging
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NVMFWS2D3P04M8LT1G by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NVMFWS2D3P04M8LT1G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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