STL18N60M6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 9A POWERFLAT HV
$1.73
Available to order
Reference Price (USD)
1+
$1.73215
500+
$1.7148285
1000+
$1.697507
1500+
$1.6801855
2000+
$1.662864
2500+
$1.6455425
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STL18N60M6 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STL18N60M6 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (5x6) HV
- Package / Case: 8-PowerVDFN
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