NVMFS6H852NT1G
onsemi
onsemi
MOSFET N-CH 80V 10A/40A 5DFN
$0.58
Available to order
Reference Price (USD)
1+
$0.58212
500+
$0.5762988
1000+
$0.5704776
1500+
$0.5646564
2000+
$0.5588352
2500+
$0.553014
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NVMFS6H852NT1G from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NVMFS6H852NT1G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Vishay Siliconix
SIRA01DP-T1-GE3
Nexperia USA Inc.
BST82,215
Vishay Siliconix
SI2314EDS-T1-E3
Fairchild Semiconductor
FDS7060N7
Infineon Technologies
IPP80R1K2P7
onsemi
FDMS86103L
STMicroelectronics
STS6P3LLH6
Renesas Electronics America Inc
NP36P04SDG-E1-AY
Toshiba Semiconductor and Storage
TK100L60W,VQ
STMicroelectronics