STP2N62K3
STMicroelectronics
STMicroelectronics
MOSFET N-CH 620V 2.2A TO220
$1.25
Available to order
Reference Price (USD)
1+
$1.46000
50+
$1.17040
100+
$1.02410
500+
$0.79420
1,000+
$0.62700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance STP2N62K3 from STMicroelectronics, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, STP2N62K3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 620 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPI80N04S303AKSA1
NXP Semiconductors
PSMN8R5-100ESFQ
Renesas Electronics America Inc
2SK3054-T1-A
Diodes Incorporated
DMN3730UFB4-7
Vishay Siliconix
SI2305CDS-T1-GE3
Rectron USA
RM80N150T2
Infineon Technologies
IRF8736TRPBF
Vishay Siliconix
IRF644PBF-BE3
Infineon Technologies
SPA08N80C3XKSA1
Vishay Siliconix